Growth of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te-epitaxial Layers By A Multi-Slice LPE Apparatus

C Geibel; H Maier; J Ziegler

doi:10.1117/12.938546

22 November 1986 Growth of Hg_1-xCd_xTe-epitaxial Layers By A Multi-Slice LPE Apparatus

C Geibel, H Maier, J Ziegler

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938546
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

Hg_l-xCd_xTe-layers have been grown on CdTe- and Cdi__y^Zn_yTe-substrates by liquid-phase-epitaxy from a Te-rich solution in a vertical dipping system. This technique allows a series of layers to be grown simultaneously. Throughput and quality of the layers obtained are well suited for production of photovoltaic IR-detectors and renders this technique a promising alternative to bulk growth.

Citation Download Citation

C Geibel, H Maier, and J Ziegler "Growth of Hg_1-xCd_xTe-epitaxial Layers By A Multi-Slice LPE Apparatus", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938546

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