A 60 GHz microwave resonance investigation of shallowly formed InAs quantum dots embedded in GaAs

Nerija Žurauskienė; Griet Janssen; Etienne Goovaerts; Marek Godlewski; Vitalii Yu. Ivanov; Paul M. Koenraad

doi:10.1117/12.726363

25 January 2007 A 60 GHz microwave resonance investigation of shallowly formed InAs quantum dots embedded in GaAs

Nerija Žurauskienė, Griet Janssen, Etienne Goovaerts, Marek Godlewski, Vitalii Yu. Ivanov, Paul M. Koenraad

Author Affiliations +

Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 659609 (2007) https://doi.org/10.1117/12.726363
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania

Abstract

Shallowly formed InAs quantum dots (QDs) embedded in GaAs are investigated by Optically Detected Microwave Resonance (ODMR) technique. The low temperature (1.6 K) photoluminescence (PL) spectrum reveals a two-peak structure which is attributed to two different classes of QDs: smaller and larger in size. V-band (60 GHz) ODMR is selectively detected in each of the peaks and depending on the PL detection energy, a different ODMR spectrum is obtained. Detection in the high-energy band reveals a low-field negative signal which is ascribed to cyclotron resonance of the electron in the two-dimensional wetting layer, corresponding to an effective mass of 0.067 m₀. The microwave-induced signal at higher fields (~1.1 T) is tentatively attributed to magnetic resonance transitions between spin states of the holes confined in the smaller QDs. When monitoring the emission of the larger QDs, the obtained microwave-induced signal is negative while the resonance line at low field, associated with the cyclotron resonance, is no longer present. The V-band ODMR spectra are compared with W-band (94 GHz) measurements obtained for the same QD structure.

Citation Download Citation

Nerija Žurauskienė, Griet Janssen, Etienne Goovaerts, Marek Godlewski, Vitalii Yu. Ivanov, and Paul M. Koenraad "A 60 GHz microwave resonance investigation of shallowly formed InAs quantum dots embedded in GaAs", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659609 (25 January 2007); https://doi.org/10.1117/12.726363

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE