Growth and characterization of <110> oriented ZnTe single crystal

Reng Wang; Weizheng Fang; Pei Zhao; Caihong Zhang; Lei Zhang; Jin Ge; Huier Zhang; Jun Shao; Shuhong Hu; Xuemin Shen; Ning Dai

doi:10.1117/12.754091

17 January 2008 Growth and characterization of <110> oriented ZnTe single crystal

Reng Wang, Weizheng Fang, Pei Zhao, Caihong Zhang, Lei Zhang, Jin Ge, Huier Zhang, Jun Shao, Shuhong Hu, Xuemin Shen, Ning Dai

Author Affiliations +

Proceedings Volume 6835, Infrared Materials, Devices, and Applications; 683519 (2008) https://doi.org/10.1117/12.754091
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

ZnTe crystal has been grown at a temperature as low as 1060°C using Te solvent method. X-ray diffraction showed that the ZnTe crystals were grown from <110> oriented. The transmission was over 60% from 2 μm to 22 μm by using Fourier Transform Infrared Spectrometer. The etch pit density in the sliced wafer was about 2×10⁴ cm^-2 detected by Scan Electronic Microscopic. The transmission spectrums were measured from 0.2 to 3 THz by using Terahertz Time Domain Spectroscopy. And the refractive index and extinction coefficient were obtained through analysis of the time domain waveform.

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Reng Wang, Weizheng Fang, Pei Zhao, Caihong Zhang, Lei Zhang, Jin Ge, Huier Zhang, Jun Shao, Shuhong Hu, Xuemin Shen, and Ning Dai "Growth and characterization of <110> oriented ZnTe single crystal", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683519 (17 January 2008); https://doi.org/10.1117/12.754091

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