Stress measurement system for process control

Kumiko Akashika; Masahiro Horie

doi:10.1117/12.772399

27 March 2008 Stress measurement system for process control

Kumiko Akashika, Masahiro Horie

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 692231 (2008) https://doi.org/10.1117/12.772399
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Recently, stressed silicon wafers have begun being used and it is necessary to measure the strain in the surface film for process control. We developed a stress measurement system with a built in film thickness measurement tool. In pursuing this development we concentrated on the high-throughput and stable results required for semiconductor process control tools. We achieved the desired results by using a collimator in the microscope. Our system can measure the stress in 1 dimension line on a 300 mm wafer in less than 30 seconds. Then we proceed to measure wafer patterns with the same system. We describe this system and the measurement data it provides.

Citation Download Citation

Kumiko Akashika and Masahiro Horie "Stress measurement system for process control", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692231 (27 March 2008); https://doi.org/10.1117/12.772399

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