Paper
25 March 2008 UV-reflectometory for fast trench-depth measurement
Masahiro Horie, Shuji Shiota, Shinji Yamaguchi, Kakumichi Yamano, Masayoshi Kobayashi
Author Affiliations +
Abstract
The demands on optical metrology of etched structures continue to increase as microelectronics become more complex and use higher aspect ratios. We will show the ability of the Dainippon Screen trench measurement tool to measure linear trench device dimensions, such as trench depth, width monitoring, and mesa oxide thickness, with high precision and accuracy. The advantages of our tool are high throughput, cost effectiveness and ease of use, because of its optimization using an optical interference calculation. This tool used has demonstrated repeatability on the order of 3σ < 1 nm in Trench Depth and SiO2 thickness measurements.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Horie, Shuji Shiota, Shinji Yamaguchi, Kakumichi Yamano, and Masayoshi Kobayashi "UV-reflectometory for fast trench-depth measurement", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223D (25 March 2008); https://doi.org/10.1117/12.772425
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Scanning electron microscopy

Silicon

Field effect transistors

Microscopes

Mirrors

Reflectivity

Silica

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