Paper
23 April 2008 Reverse polarization switching in ferroelectric lead zirconate titanate (PZT) thin films
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Abstract
The effect of shear stress on polarization retention in ferroelectric thin films was assessed using a nonlinear finite element phase field model. It is shown that reverse switching can occur when tetragonal phase films are grown in the <111> orientation. The effect of a substrate and a top electrode are modeled by applying rigid constraints and shear loads to the finite element phase field model to predict the evolution of ferroelectric domain structures. The residual shear stress in the film is shown to increase when the film is rigidly clamped to a substrate. When shear stress is applied to the top surface of the thin film model, 90° domain walls move in the direction of shear loading. Model predictions are found to qualitatively correlate with piezoelectric response microscopy experiments given in the literature.
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William S. Oates "Reverse polarization switching in ferroelectric lead zirconate titanate (PZT) thin films", Proc. SPIE 6929, Behavior and Mechanics of Multifunctional and Composite Materials 2008, 69290C (23 April 2008); https://doi.org/10.1117/12.775838
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KEYWORDS
Polarization

Switching

Thin films

Electrodes

Ferroelectric materials

Finite element methods

Motion models

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