Na+-doped ZnO thin films (Zn1-xNaxO, x=0-0.20) were prepared on Si<100> substrate by sol-gel method using zinc
acetate and sodium carbonate as starting materials. The electrical properties, including the conducting type and the
carrier concentration, as well as the optical properties of the so-obtained films were investigated by four-point probe van
der Pauw method and photoluminescence (PL) spectroscopy. After doping Na+, the conductive type of ZnO films
changed to p from n-type, indicating that Na+ can act as an acceptor to occupy the Zn2+ sites in ZnO lattice. The
resistivity, Hall mobility, and the hole concentration of the film with x=0.10 were 75.7 Ω•cm, 2.1 cm2/V s and
2.955×1016/cm3, respectively. The PL results showed that there were a narrow near-band-edge (NBE) emission line and a
broad deep-level (DL) emission for all the films with and without Na+ dopants. A slight blue-shift from about 383nm to
380nm of NBE line was observed for the films after doping Na+.
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