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193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. A new Cr absorber
(TFC) for 193-nm attenuated phase-shift blanks was developed to meet the photomask requirements without any additional
process step, such as hardmask etching.
TFC was introduced with a design concept of the vertical profile for shorter etching time, the over etching time
reduction. As a result, the dry-etching time was dramatically improved by more than 20% shorter than the conventional
Cr absorber (TF11) without any process changes. We confirmed that 150nm-resist thickness was possible by TFC. The
32nm technology-node requirement is fully supported by TFC with thinner CAR, such as resolution and CD
performance.
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