The APC (Advanced Process Control) procedure for process window and CDU improvement using DBMs

Jung-Chan Kim; Taehyeong Lee; Areum Jung; Gyun Yoo; Hyunjo Yang; Donggyu Yim; Sungki Park; Jaeyoung Seo; Byoungjun Park; Toshiaki Hasebe; Masahiro Yamamoto

doi:10.1117/12.804652

4 December 2008 The APC (Advanced Process Control) procedure for process window and CDU improvement using DBMs

Jung-Chan Kim, Taehyeong Lee, Areum Jung, Gyun Yoo, Hyunjo Yang, Donggyu Yim, Sungki Park, Jaeyoung Seo, Byoungjun Park, Toshiaki Hasebe, Masahiro Yamamoto

Author Affiliations +

Proceedings Volume 7140, Lithography Asia 2008; 71403G (2008) https://doi.org/10.1117/12.804652
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

The downscaling of the feature size and pitches of the semi-conductor device requires enough process window and good CDU of exposure field for improvement of device characteristics and high yield. Recently several DBMs (Design Based Metrologies) are introduced for the wafer verification and feed back to for DFM and process control. The major applications of DBM are OPC feed back, process window qualification and advanced process control feed back. With these tools, since the applied tool in this procedure uses e-beam scan method with database of design layout like other ones, more precise and quick verification can be done. In this work the process window qualification procedure will be discussed in connection with EDA simulation results and then method for obtaining good CDU will be introduced. DoseMapperTM application has been introduced for better field CDU control, but it is difficult to fully correct large field with limited data from normal CD SEM methodology. New DBM has strong points in collecting lots of data required for large field correction with good repeatability (Intra / Inter field).

Citation Download Citation

Jung-Chan Kim, Taehyeong Lee, Areum Jung, Gyun Yoo, Hyunjo Yang, Donggyu Yim, Sungki Park, Jaeyoung Seo, Byoungjun Park, Toshiaki Hasebe, and Masahiro Yamamoto "The APC (Advanced Process Control) procedure for process window and CDU improvement using DBMs", Proc. SPIE 7140, Lithography Asia 2008, 71403G (4 December 2008); https://doi.org/10.1117/12.804652

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
11 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconducting wafers

Inspection

Photomasks

Critical dimension metrology

Computer aided design

Metrology

Process control

Show All Keywords

Keywords/Phrases

Search In:

Publication Years