Electron Irradiation of InGaAsP LEDs and InGaAs Photodetectors

K. C. Dimiduk; P. J. O'Reilly

doi:10.1117/12.937622

4 February 1987 Electron Irradiation of InGaAsP LEDs and InGaAs Photodetectors

K. C. Dimiduk, P. J. O'Reilly

Proceedings Volume 0721, Fiber Optics in Adverse Environments III; (1987) https://doi.org/10.1117/12.937622
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

The effect of 30 MeV electron irradiWon op InGaA LEDs and InGaAs photodiodes was studied. Electron fluxes ranged from 10¹² e/cm² to 10¹⁵ e/cm². The beam profile was measured with an improved scanning wire technique. During irradiation, light output, total current, and temperature were monitored for the LEDs. Responsivity and temperature were monitored for the photodiodes. Spectral characteristics and current-voltage curves were measured before and after irradiations. Changes in photodiode dark current were observed and LED lifetime-damage constant products were computed.

Citation Download Citation

K. C. Dimiduk and P. J. O'Reilly "Electron Irradiation of InGaAsP LEDs and InGaAs Photodetectors", Proc. SPIE 0721, Fiber Optics in Adverse Environments III, (4 February 1987); https://doi.org/10.1117/12.937622

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