Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes

Shi-Hao Guol; H.-W. Huang; C.-S. Lin; J.-K. Sheu; C.-J. Tin; C.-H. Kuo; Jin-Wei Shi

doi:10.1117/12.808713

16 February 2009 Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes

Shi-Hao Guol, H.-W. Huang, C.-S. Lin, J.-K. Sheu, C.-J. Tin, C.-H. Kuo, Jin-Wei Shi

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721629 (2009) https://doi.org/10.1117/12.808713
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa1-xN/GaN multiple-quantumwells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

Citation Download Citation

Shi-Hao Guol, H.-W. Huang, C.-S. Lin, J.-K. Sheu, C.-J. Tin, C.-H. Kuo, and Jin-Wei Shi "Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721629 (16 February 2009); https://doi.org/10.1117/12.808713

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