Gating Of Thyristors For Laser Power Supplies

J. L. Hudgins; W. M. Portnoy

doi:10.1117/12.938054

18 May 1987 Gating Of Thyristors For Laser Power Supplies

J. L. Hudgins, W. M. Portnoy

Proceedings Volume 0735, Pulse Power for Lasers; (1987) https://doi.org/10.1117/12.938054
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

Gating parameters for using thyristors in laser power supplies are discussed. Manufacturer's recommendations for improving turn-on in SCRs are reviewed. Measurements of gate current, voltage, and power, in excess of specified device gate maximums, indicate that peak gate current is the primary factor controlling the rate of rise of anode current.

Citation Download Citation

J. L. Hudgins and W. M. Portnoy "Gating Of Thyristors For Laser Power Supplies", Proc. SPIE 0735, Pulse Power for Lasers, (18 May 1987); https://doi.org/10.1117/12.938054

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