Paper
11 May 2009 Adhesion control between resist patterns and photomask blank surfaces
Author Affiliations +
Abstract
Most problems in photomask fabrication such as pattern collapse, haze, and cleaning damage are related to the behavior of surfaces and interfaces of resists, opaque layers, and quartz substrates. Therefore, it is important to control the corresponding surface and interface energies in photomask fabrication processes. In particular, adhesion analysis in microscopic regions is strongly desirable to optimize material and process designs in photomask fabrication. We applied the direct peeling (DP) method with a scanning probe microscope (SPM) tip and measured the adhesion of resist patterns on Cr and quartz surfaces for photomask process optimization. We measured adhesion and frictional forces between the resulting collapsed resist pillar and the Cr or the quartz surface before and after the sliding. We also studied the effect of surface property of the Cr and quartz surfaces to resist adhesion. The adhesion could be controlled by surface modification using silanes and surface roughness on Cr blanks. We also discuss the relationship between the adhesion observed with the DP method and the properties of the modified surfaces including water contact angles and local adhesive forces measured from force-distance curves with an SPM.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaaki Kurihara, Sho Hatakeyama, Kouji Yoshida, Takaharu Nagai, Daisuke Totsukawa, Masaharu Fukuda, Yasutaka Morikawa, Hiroshi Mohri, Morihisa Hoga, Naoya Hayashi, Hiroyuki Ohtani, and Masamichi Fujihira "Adhesion control between resist patterns and photomask blank surfaces", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790A (11 May 2009); https://doi.org/10.1117/12.824251
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KEYWORDS
Chromium

Photomasks

Quartz

Surface roughness

Head-mounted displays

Scanning probe microscopy

Photoresist processing

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