Paper
4 August 2009 Initial stage of the active mode-locking in semiconductor heterolasers
Alexandre S. Shcherbakov, Alexey Yu. Kosarsky, Joaquin Campos Acosta, Pedro Moreno Zarate, Svetlana Mansurova
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Proceedings Volume 7386, Photonics North 2009; 73862Z (2009) https://doi.org/10.1117/12.839296
Event: Photonics North 2009, 2009, Quebec, Canada
Abstract
We make an attempt to develop a novel approach to describing the initial stage of the active mode-locking in semiconductor laser structures based on analyzing the properties of dispersion relations in terms of stability for small initial perturbations. Nonlinear process of shaping optical pulses is interpreted as manifesting instability of diffusion type. For the purposes of experimental investigations, the auto-manual opto-electronic measuring system detecting average time parameters inherent in ultra-short optical pulse trains has been designed. This system is able to register auto-correlation functions of the second order exploiting the interferometric technique as well as to identify a pulsed character of the incoming light radiation. Experimental confirmations of appearing the diffusive instability within the active mode-locking process in semiconductor laser structures operating in the near infrared range are presented.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandre S. Shcherbakov, Alexey Yu. Kosarsky, Joaquin Campos Acosta, Pedro Moreno Zarate, and Svetlana Mansurova "Initial stage of the active mode-locking in semiconductor heterolasers", Proc. SPIE 7386, Photonics North 2009, 73862Z (4 August 2009); https://doi.org/10.1117/12.839296
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KEYWORDS
Mode locking

Photodetectors

Semiconductor lasers

Picosecond phenomena

Semiconductors

Diffusion

Dispersion

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