Numerical modeling of thermionic electrons in abrupt isotype heterojunction for the light emitting transistor

Huaxiong Zhao; Zhiyou Guo; Kun Zeng; Xiaoqi Gao

doi:10.1117/12.841121

12 October 2009 Numerical modeling of thermionic electrons in abrupt isotype heterojunction for the light emitting transistor

Huaxiong Zhao, Zhiyou Guo, Kun Zeng, Xiaoqi Gao

Author Affiliations +

Proceedings Volume 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies; 75181C (2009) https://doi.org/10.1117/12.841121
Event: Photonics and Optoelectronics Meetings 2009, 2009, Wuhan, China

Abstract

Light can emit from light emitting transistor of III-V materials. The pn-n+ structure of light emitting transistor, which has an additional n-n+ heterojunction between the base and electron emitter, is suggested. The base voltage can control the light output effectively. The functional principle of light emitting transistor is illuminated. A model about the abrupt isotype heterojunction in the base has been utilized to describe thermionic electron transport, current density and potential barrier in such a device. The model is used to explain the underlying mechanisms of the present devices.

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Huaxiong Zhao, Zhiyou Guo, Kun Zeng, and Xiaoqi Gao "Numerical modeling of thermionic electrons in abrupt isotype heterojunction for the light emitting transistor", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75181C (12 October 2009); https://doi.org/10.1117/12.841121

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