Fabrication of black silicon materials by wet etching and characterization

Zhengyu Guo; Zhiming Wu; Anyuan Zhang; Jing Jiang; Guodong Zhao; Yadong Jiang

doi:10.1117/12.865825

22 October 2010 Fabrication of black silicon materials by wet etching and characterization

Zhengyu Guo, Zhiming Wu, Anyuan Zhang, Jing Jiang, Guodong Zhao, Yadong Jiang

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76584S (2010) https://doi.org/10.1117/12.865825
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

In this paper we use Si₃N₄ membrane acting as mask in fabrication of black silicon by wet etching technique, and the sample have nearly 90% absorptance at wavelength from 250 nm to 1000 nm. The experiments result shows that Si₃N₄ membrane as mask wet etching technique for fabrication of black silicon is feasibility, and has much more advantages compared to fabrication of black silicon by using femtosecond laser, RIE and hydrothermal etching. It provides a proper and economical method for fabrication of black silicon visible and near-infrared optoelectronic devices.

Citation Download Citation

Zhengyu Guo, Zhiming Wu, Anyuan Zhang, Jing Jiang, Guodong Zhao, and Yadong Jiang "Fabrication of black silicon materials by wet etching and characterization", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76584S (22 October 2010); https://doi.org/10.1117/12.865825

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