Paper
5 May 2010 Ultra-high sensitivity CO-sensor based on nanocrystalline metal oxide gate AlGaN/GaN heterostructure
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Abstract
This paper presents a robust sensor to detect low concentration (<1 ppm) of CO gas. The sensor is based on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor (MOS-HEMT) with a non-conventional gate structure. The performance of the device has been simulated based on the charge control physics of AlGaN/GaN heterostructure transistor. Large sensitivities and widely linear characteristics are obtained for the AlGaN/GaN device based sensor assuming ideal gas-surface kinetics which can be approximated by the proposed gate structure. The sensor generates 0.8 μA of current for 0.5 ppm concentration of CO. The sensor shows linear characteristics for concentration of 1000 ppm CO. The effects of varying aspect ratio on total changes in current, sensitivity and linearity of the device have been simulated.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sazia A. Eliza, Robert Olah, and Achyut K. Dutta "Ultra-high sensitivity CO-sensor based on nanocrystalline metal oxide gate AlGaN/GaN heterostructure", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790R (5 May 2010); https://doi.org/10.1117/12.852727
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Cited by 1 scholarly publication.
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KEYWORDS
Carbon monoxide

Sensors

Field effect transistors

Oxides

Platinum

Absorption

Gallium nitride

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