In this paper, thermodynamics method was used to calculate the growth of GaN1-xPx ternary alloys on (0001)
GaN/sapphire substrates and the solubility of phosphorus in GaN by using the Gibbs free energy theory was calculated.
The calculated results show that great deviation from linearity between the input mole ratio R and the equilibrium partial
pressures, and the content of P in GaN varies with the growth temperature and the boundary of the spinodal isotherm
shifts from x=0.06 to x=0.25 at the growth temperature of 1200K as the strain factor increases from 0 to 1, indicating that
the strain in the GaN1-xPx layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growth temperature.
|