III-nitride nanowires: growth, properties, and applications

George T. Wang; Qiming Li; Jianyu Huang; A. Alec Talin; Yong Lin; Ilke Arslan; Andrew Armstrong; Prashanth C. Upadhya; Rohit P. Prasankumar

doi:10.1117/12.859404

27 August 2010 III-nitride nanowires: growth, properties, and applications

George T. Wang, Qiming Li, Jianyu Huang, A. Alec Talin, Yong Lin, Ilke Arslan, Andrew Armstrong, Prashanth C. Upadhya, Rohit P. Prasankumar

Author Affiliations +

Proceedings Volume 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II; 77680K (2010) https://doi.org/10.1117/12.859404
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

Nanowires based on the III nitride materials system have attracted attention as potential nanoscale building blocks in optoelectronics, sensing, and electronics. However, before such applications can be realized, several challenges exist in the areas of controlled and ordered nanowire synthesis, fabrication of advanced nanowire heterostructures, and understanding and controlling the nanowire electrical and optical properties. Here, recent work is presented involving the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using advanced electrical, optical and structural characterization techniques.

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George T. Wang, Qiming Li, Jianyu Huang, A. Alec Talin, Yong Lin, Ilke Arslan, Andrew Armstrong, Prashanth C. Upadhya, and Rohit P. Prasankumar "III-nitride nanowires: growth, properties, and applications", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680K (27 August 2010); https://doi.org/10.1117/12.859404

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