Paper
20 April 1987 Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates
R. Houdre, G. Munns, H. Morkoc, C. Choi, N. Otsuka, S. L. Zhang, D. Levi, M. V. Klein
Author Affiliations +
Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940992
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Gallium arsenide layers grown by molecular beam epitaxy on (100) Si substrates, subjected to various types of annealing, exhibit a substantial reduction in dislocation density near the interface and in the bulk of the epitaxial layer. Different kinds of annealing are examined, ex-situ annealing which is done in a furnace after the growth and in-situ annealing which is done during the growth.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Houdre, G. Munns, H. Morkoc, C. Choi, N. Otsuka, S. L. Zhang, D. Levi, and M. V. Klein "Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.940992
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Annealing

Gallium arsenide

Silicon

Laser sintering

Interfaces

Transmission electron microscopy

Compound semiconductors

Back to Top