Material Properties And Device Application Of GaAs And GaAsP Grown On Si Using Superlattice Intermediate Layers By MOCVD

Shiro Sakai; Masayoshi Umeno; Young Soon Kim

doi:10.1117/12.941016

20 April 1987 Material Properties And Device Application Of GaAs And GaAsP Grown On Si Using Superlattice Intermediate Layers By MOCVD

Shiro Sakai, Masayoshi Umeno, Young Soon Kim

Author Affiliations +

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941016
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The initial growth model of III-V compounds on Si is proposed and the necessary conditions to obtain an anti-phase domain (APD) free crystal are discussed. APD free crystals can be obtained on the (100) Si surface having mono-atomic as well as hiatomic layer steps if the surface has a misalignment towards <011> ±θ (θ≠45°) direction. The stress produced by the difference in thermal expansion coefficients of Si and GaAs is also calculated and discussed. The stress in the GaAs layer can be zero by adding another layer having the thermal expansion coefficient higher than GaAs either on the Si substrate back surface, or on the GaAs grown surface or in between them.

Citation Download Citation

Shiro Sakai, Masayoshi Umeno, and Young Soon Kim "Material Properties And Device Application Of GaAs And GaAsP Grown On Si Using Superlattice Intermediate Layers By MOCVD", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941016

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