Terahertz imaging with InP high-electron-mobility transistors

Takayuki Watanabe; Keisuke Akagawa; Yudai Tanimoto; Dominique Coquillat; Wojciech Knap; Taiichi Otsuji

doi:10.1117/12.887952

25 May 2011 Terahertz imaging with InP high-electron-mobility transistors

Takayuki Watanabe, Keisuke Akagawa, Yudai Tanimoto, Dominique Coquillat, Wojciech Knap, Taiichi Otsuji

Proceedings Volume 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense; 80230P (2011) https://doi.org/10.1117/12.887952
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation ΔI_d becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at θ = 160 degrees.

Citation Download Citation

Takayuki Watanabe, Keisuke Akagawa, Yudai Tanimoto, Dominique Coquillat, Wojciech Knap, and Taiichi Otsuji "Terahertz imaging with InP high-electron-mobility transistors", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230P (25 May 2011); https://doi.org/10.1117/12.887952

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