Molecular Structure Of Six Te1-X Glasses And Oxygen Alloying Effects

P. Boolchand; B. Norban; R. Enzweiler; J. E. Griffiths; J. C. Phillips

doi:10.1117/12.941945

19 January 1988 Molecular Structure Of Si_x Te_1-X Glasses And Oxygen Alloying Effects

P. Boolchand, B. Norban, R. Enzweiler, J. E. Griffiths, J. C. Phillips

Proceedings Volume 0822, Raman and Luminescence Spectroscopy in Technology; (1988) https://doi.org/10.1117/12.941945
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

Raman vibrational modes, Mossbauer Electric Field Gradients and crystallization temperatures exhibit threshold behavior near the composition x=0.20 in binary SixTel_x glasses. This threshold is evidence of a morphological structural change that may be driven by average coordination number. At x.0.20, the glass structure largely consists of Ten chain segments cross-linked by Si atoms and this structure is characteristic of other IV-VI semiconductors. At x Z 0.20, Ten chains reconstruct with tetrahedral Si(Te112)4 units and nucleate a defectridden Si2Te3-like closed packed layer structure which is more metallic in character. Oxygen alloying effects in the semiconducting phase are qualitatively different from those in the metallic phase. The presence of oxygen drastically alters the kinetics of crystallization of the alloy glasses.

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P. Boolchand, B. Norban, R. Enzweiler, J. E. Griffiths, and J. C. Phillips "Molecular Structure Of Si_x Te_1-X Glasses And Oxygen Alloying Effects", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941945

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