Paper
8 February 2012 Improvement of wall plug efficiency in near-infrared lateral single-mode LDs at high temperature
Tetsuya Yagi, Takuto Maruyama, Masatsugu Kusunoki, Naoyuki Shimada, Motoharu Miyashita
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Abstract
Wall plug efficiency (WPE) of 830 nm single mode LD is dramatically improved with AlGaInP material. Conventional near infrared LDs based on AlGaAs have poor temperature characteristics due to small energy gap in conduction band between a p-cladding layer and an active layer. An AlGaInP based LD is a most effective candidate for the excellent characteristics because of the large gap. A high power 830 nm LD is newly designed based on AlGaInP. The LD shows excellent temperature characteristics as To of 154 K, and its WPE is around 40% at 400mW, CW output, 60°C case temperature. They also show very stable operation at the condition up to 1,100 hours.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsuya Yagi, Takuto Maruyama, Masatsugu Kusunoki, Naoyuki Shimada, and Motoharu Miyashita "Improvement of wall plug efficiency in near-infrared lateral single-mode LDs at high temperature", Proc. SPIE 8241, High-Power Diode Laser Technology and Applications X, 82410Y (8 February 2012); https://doi.org/10.1117/12.906503
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KEYWORDS
Aluminium gallium indium phosphide

Cladding

Near infrared

Gallium arsenide

Doping

Sensors

Aluminum

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