Integrated Optic Response To Nuclear Irradiations

E. W. Taylor

doi:10.1117/12.967501

1 January 1987 Integrated Optic Response To Nuclear Irradiations

E. W. Taylor

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967501
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Experimental results are presented on LiNb0₃:Ti integrated optic device response to various nuclear irradiations. The results are compared to earlier studies performed on GaAlAs and LiNb0₃ and, the importance of various physical effects parameters such as photorefraction and photobleaching are presented for future consideration of studying device responses under varying temperature, optical power and irradiation levels. Data demonstrating the ability of LiNb0₃:Ti to withstand a gamma and X-ray accumulated dose of 204 Krad (Si) is reported and comparison of the data to a geminate ion recombination kinetic model is presented.

Citation Download Citation

E. W. Taylor "Integrated Optic Response To Nuclear Irradiations", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967501

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