Excited-state absorption measurements of Tm3+-doped crystals

J. W. Szela; J. I. Mackenzie

doi:10.1117/12.922673

15 May 2012 Excited-state absorption measurements of Tm³⁺-doped crystals

J. W. Szela, J. I. Mackenzie

Author Affiliations +

Proceedings Volume 8433, Laser Sources and Applications; 84331O (2012) https://doi.org/10.1117/12.922673
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

High resolution, absolute excited-state absorption (ESA) spectra, at room temperature, from the long-lived ³F₄ energy level of several crystals doped with trivalent thulium (Tm³⁺) ions have been measured employing high-brightness narrowband (FWHM <30 nm) light emitting diodes (LEDs) as a probe wavelength. The aim of this investigation was to determine the strength of ESA channels at wavelengths addressable by commercially available semiconductor laser diodes operating around 630-680 nm. The favourable lifetime of the ³F₄ manifold and negligible ground-state absorption (GSA) for the red-wavelength second-step excitation, ensures a direct and efficient route for a dual-wavelength pumping scheme of the thulium ion, which will enable blue-green laser emission from its ¹G₄ upper-laser level.

Citation Download Citation

J. W. Szela and J. I. Mackenzie "Excited-state absorption measurements of Tm³⁺-doped crystals", Proc. SPIE 8433, Laser Sources and Applications, 84331O (15 May 2012); https://doi.org/10.1117/12.922673

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