Systematic study of source mask optimization and verification flows

Yu Ben; Azat Latypov; Gek Soon Chua; Yi Zou

doi:10.1117/12.965565

29 June 2012 Systematic study of source mask optimization and verification flows

Yu Ben, Azat Latypov, Gek Soon Chua, Yi Zou

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84410U (2012) https://doi.org/10.1117/12.965565
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

Source mask optimization (SMO) emerged as powerful resolution enhancement technique (RET) for advanced technology nodes. However, there is a plethora of flow and verification metrics in the field, confounding the end user of the technique. Systemic study of different flows and the possible unification thereof is missing. This contribution is intended to reveal the pros and cons of different SMO approaches and verification metrics, understand the commonality and difference, and provide a generic guideline for RET selection via SMO. The paper discusses 3 different type of variations commonly arise in SMO, namely pattern preparation and selection, availability of relevant OPC recipe for freeform source and finally the metrics used in source verification. Several pattern selection algorithms are compared and advantages of systematic pattern selection algorithms are discussed. In the absence of a full resist model for SMO, alternative SMO flow without full resist model is reviewed. Preferred verification flow with quality metrics of DOF and MEEF is examined.

Citation Download Citation

Yu Ben, Azat Latypov, Gek Soon Chua, and Yi Zou "Systematic study of source mask optimization and verification flows", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410U (29 June 2012); https://doi.org/10.1117/12.965565

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KEYWORDS

Source mask optimization

Molybdenum

Optical proximity correction

Electroluminescence

Resolution enhancement technologies

Tolerancing

Critical dimension metrology

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