Indium phosphide nanowire network: growth and characterization for thermoelectric conversion

Kate J. Norris; Junce Zhang; David M. Fryauf; Alison Rugar; Amanda Flores; Timothy J. Longson; Andrew J Lohn; Nobuhiko P Kobayashi

doi:10.1117/12.929861

11 October 2012 Indium phosphide nanowire network: growth and characterization for thermoelectric conversion

Kate J. Norris, Junce Zhang, David M. Fryauf, Alison Rugar, Amanda Flores, Timothy J. Longson, Andrew J Lohn, Nobuhiko P Kobayashi

Author Affiliations +

Proceedings Volume 8467, Nanoepitaxy: Materials and Devices IV; 84670E (2012) https://doi.org/10.1117/12.929861
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States

Abstract

Indium phosphide (InP) nanowires were grown by metal organic chemical vapor deposition (MOCVD). InP nanowires grew in the structure of three-dimensional networks in which electrical charges and heat can travel over distances much longer than the mean length of the constituent nanowires. We studied the dependence of thermoelectric properties on geometrical factors within the InP nanowire networks. The InP nanowire networks show Seebeck coefficients comparable with that of bulk InP. Rather than studying single nanowires, we chose networks of nanowires formed densely across large areas required for large scale production. We also studied the role played by intersections where multiple nanowires were fused to form the nanowire networks. Modeling based on finite-element analysis, structural analysis, and transport measurements were carried out to obtain insights of physical properties at the intersections. Understanding these physical properties of three-dimensional nanowire networks will advance the development of thermoelectric devices.

Citation Download Citation

Kate J. Norris, Junce Zhang, David M. Fryauf, Alison Rugar, Amanda Flores, Timothy J. Longson, Andrew J Lohn, and Nobuhiko P Kobayashi "Indium phosphide nanowire network: growth and characterization for thermoelectric conversion", Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670E (11 October 2012); https://doi.org/10.1117/12.929861

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available