Paper
29 March 2013 Self-aligned double patterning friendly configuration for standard cell library considering placement impact
Jhih-Rong Gao, Bei Yu, Ru Huang, David Z. Pan
Author Affiliations +
Abstract
Self-aligned double patterning (SADP) has become a promising technique to push pattern resolution limit to sub-22nm technology node. Although SADP provides good overlay controllability, it encounters many challenges in physical design stages to obtain conflict-free layout decomposition. In this paper, we study the impact on placement by different standard cell layout decomposition strategies. We propose a SADP friendly standard cell configuration which provides pre-coloring results for standard cells. These configurations are brought into the placement stage to help ensure layout decomposability and save the extra effort for solving conflicts in later stages.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jhih-Rong Gao, Bei Yu, Ru Huang, and David Z. Pan "Self-aligned double patterning friendly configuration for standard cell library considering placement impact", Proc. SPIE 8684, Design for Manufacturability through Design-Process Integration VII, 868406 (29 March 2013); https://doi.org/10.1117/12.2011660
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CITATIONS
Cited by 14 scholarly publications.
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KEYWORDS
Double patterning technology

Manufacturing

Photomasks

Standards development

Computer aided design

Antimony

Design for manufacturability

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