Thermal properties of Te-based phase-change materials

Xiaolin Cai; Jingsong Wei

doi:10.1117/12.2014908

24 January 2013 Thermal properties of Te-based phase-change materials

Xiaolin Cai, Jingsong Wei

Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820O (2013) https://doi.org/10.1117/12.2014908
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China

Abstract

Te-based phase-change materials (such as Te, Ge₂Sb₂Te₅, and Ag₈In₁₄Sb₅₅Te₂₃) are employed now in optical data storage and non-volatile electrical memory due to the acceptable optical and electrical contrast between the crystalline and amorphous states. Thermal properties of the materials have an important influence on the device performance. In this work, the dependence of thermal properties of Te-based phase-change materials on temperature is measured and analyzed. Comparisons among these three Te-based phase-change materials are made, and the origins of thermal conductivity in Te, Ge₂Sb₂Te₅ and AgInSbTe are also discussed. One can see that the thermal properties of crystalline Ge₂Sb₂Te₅ are more similar to those of Te with respect to AgInSbTe due to containing higher percentage of Te element. These experimental data can be helpful for optimizing the performance of phase change memory devices.

Citation Download Citation

Xiaolin Cai and Jingsong Wei "Thermal properties of Te-based phase-change materials", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820O (24 January 2013); https://doi.org/10.1117/12.2014908

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