Investigation of optical nonlinear properties in semiconductor GaN

Yu Fang; Fei Ye; Zhong-guo Li; Zhao-yu Zong; Ying-lin Song

doi:10.1117/12.2034204

19 September 2013 Investigation of optical nonlinear properties in semiconductor GaN

Yu Fang, Fei Ye, Zhong-guo Li, Zhao-yu Zong, Ying-lin Song

Proceedings Volume 8905, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications; 89051F (2013) https://doi.org/10.1117/12.2034204
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

The optical nonlinearities of bulk GaN single crystal are investigated by conducting Z-scan experimental measurements, using nanosecond pulses at 532nm. The material’s nonlinear absorptive and refractive optical nonlinearities are determined by measuring the normalized transmittance with and without an aperture in the far field. After simulating the experimental curves, the two-photon absorption (TPA) coefficient, especially the refractive-index change induced by two-photon-excited free carrier, are obtained. The experimental results show that GaN has reverse saturable absorption and self-defocusing effect at 532 nm, indicating this material is a good candidate for future photonics applications. The theoretical simulation fit well with experimental results.

Citation Download Citation

Yu Fang, Fei Ye, Zhong-guo Li, Zhao-yu Zong, and Ying-lin Song "Investigation of optical nonlinear properties in semiconductor GaN", Proc. SPIE 8905, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications, 89051F (19 September 2013); https://doi.org/10.1117/12.2034204

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