Paper
7 December 2013 Improved geometrical design of the circular transmission line model ohmic contact test structure
Aaron Collins, Yue Pan, Anthony Holland
Author Affiliations +
Proceedings Volume 8923, Micro/Nano Materials, Devices, and Systems; 892359 (2013) https://doi.org/10.1117/12.2033920
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2013, Melbourne, Victoria, Australia
Abstract
This paper proposes a method to determine the design of the Circular Transmission Line Model (CTLM) in order to ensure accurate results are obtained. The CTLM is used to measure the specific contact resistance of a metalsemiconductor barrier. Through analytical modelling it has been shown that the accuracy of the measurements obtained using a particular CTLM pattern, depends on the geometry chosen. By determining which geometries will yield the most sensitive measurement will ensure an accurate result when compared to the sheet resistance and specific contact resistance of an ohmic contact sample. Analysis of the equations reveals that for any given sample a smaller geometry is preferable. This is determined by comparing the differential of specific contact resistance of the sample with the contact end resistance of the test structure. It has been found that for confident results to be obtained then the annular (centre) ring of the structure should be as narrow as is possible within testing constraints.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aaron Collins, Yue Pan, and Anthony Holland "Improved geometrical design of the circular transmission line model ohmic contact test structure", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892359 (7 December 2013); https://doi.org/10.1117/12.2033920
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Cited by 2 scholarly publications.
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KEYWORDS
Resistance

Modeling

Statistical analysis

Structural design

Bessel functions

Current controlled current source

Error analysis

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