Reduction of image optics dependence of resist image performance for high NA extreme ultraviolet lithography

Ouyang Chun; Yanqiu Li; Lihui Liu

doi:10.1117/12.2053896

31 December 2013 Reduction of image optics dependence of resist image performance for high NA extreme ultraviolet lithography

Ouyang Chun, Yanqiu Li, Lihui Liu

Author Affiliations +

Proceedings Volume 9042, 2013 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments; 90421J (2013) https://doi.org/10.1117/12.2053896
Event: International Conference on Optical Instruments and Technology (OIT2013), 2013, Beijing, China

Abstract

High Numerical Aperture (NA) extreme ultraviolet lithography (EUVL) with different reduction is one option for 16 nm node and below. In our work, as NA increases to about 0.45, we discuss the impacts of reduction ratio of 5 or 6 on resist image performance such as Horizontal-Vertical (H-V) critical dimension (CD) bias for various incident angles and CD Uniformity induced by mask CD errors at wafer level. Commercial software PROLITH ™ and in-house program are adopted in simulation referred above. In conclusion, resist image performance can be improved with the increase of reduction ratio. H-V CD Bias with reduction ratio of 6 is obviously smaller than that with reduction ratio of 5 at maximum incident angle. Additionally, CD Uniformity (nm, 3 sigma) induced by mask CD errors for 5× optics system is larger, which means image quality is worse at 5× optics system.

Citation Download Citation

Ouyang Chun, Yanqiu Li, and Lihui Liu "Reduction of image optics dependence of resist image performance for high NA extreme ultraviolet lithography", Proc. SPIE 9042, 2013 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments, 90421J (31 December 2013); https://doi.org/10.1117/12.2053896

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