Paper
17 April 2014 Study of angular effects for optical systems into the EUV
Author Affiliations +
Abstract
As EUV lithography attempts to outperform other lithographical methods to the sub-14 nm node, the demand for a larger NA traditionally dominates the drive for scaling. There are, however, many challenges to overcome in order to accomplish this [1]. Due to the reflective optics in EUV systems, angular effects of oblique illumination, and non-zero chief ray angle at the objective (CRAO), must be carefully considered and will need to be well understood if high-NA EUV is to be successful. This study investigates impact on of the bias between horizontal and vertical feature CD, image placement error and NILS. Effects of sidewall absorber angle, absorption coefficient (k) and absorber thickness are observed through pitch with various source shapes in an EUV lithography system.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew Burbine, Zac Levinson, Anthony Schepis, and Bruce W. Smith "Study of angular effects for optical systems into the EUV", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482N (17 April 2014); https://doi.org/10.1117/12.2046488
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Photomasks

Nanoimprint lithography

Diffraction

Refractive index

EUV optics

RELATED CONTENT

Interactions of 3D mask effects and NA in EUV lithography
Proceedings of SPIE (November 08 2012)
EUV mask polarization effects on sub-7nm node imaging
Proceedings of SPIE (March 23 2020)
NGL masks: development status and issue
Proceedings of SPIE (April 01 2011)
Asymmetry and thickness effects in reflective EUV masks
Proceedings of SPIE (June 16 2003)

Back to Top