Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications

Maxim S. Gorbunov; Pavel S. Dolotov; Alexandra I. Shnaider; Gennady I. Zebrev; Andrey A. Antonov; Anatoly A. Lebedev

doi:10.1117/12.2180610

18 December 2014 Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications

Maxim S. Gorbunov, Pavel S. Dolotov, Alexandra I. Shnaider, Gennady I. Zebrev, Andrey A. Antonov, Anatoly A. Lebedev

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944019 (2014) https://doi.org/10.1117/12.2180610
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

We study the Radiation-Induced Mismatch Enhancement (RIME) in 65 nm CMOS SRAM block designed for space applications. X-ray and heavy ion irradiation increase the number of non-rewriting cells.

Citation Download Citation

Maxim S. Gorbunov, Pavel S. Dolotov, Alexandra I. Shnaider, Gennady I. Zebrev, Andrey A. Antonov, and Anatoly A. Lebedev "Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944019 (18 December 2014); https://doi.org/10.1117/12.2180610

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