Optimization and analysis of near-infrared InGaAs detectors

Qingsong Wang; Jun Chen; Jiabing Lv; Mingxiang Wang; Xue Li; Hengjing Tang

doi:10.1117/12.2083191

19 February 2015 Optimization and analysis of near-infrared InGaAs detectors

Qingsong Wang, Jun Chen, Jiabing Lv, Mingxiang Wang, Xue Li, Hengjing Tang

Proceedings Volume 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014); 94491Q (2015) https://doi.org/10.1117/12.2083191
Event: The International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference (icPOE 2014), 2014, Xi'an, China

Abstract

Back-illuminated near-infrared detectors were designed and fabricated using p-InGaAs/p-InP/i-InGaAs/n-InP p-i-n layer structure. In order to optimize the detector layer structure, the device was simulated by drift-diffusion simulator “SimWindows” first, and then the epitaxy material was grown by metal organic chemical vapor deposition (MOCVD). The current-voltage characteristics of the fabricated detectors with and without light were investigated respectively. The results show that the responsivity of the detectors is around 0.7 A/W, and the dark current is about 1×10^-4 A/cm² at reverse bias 0.1V, both of which are comparable to the simulated results. Our results also show the smaller detector has better dark current density, and the dominated mechanisms of dark current are discussed in the paper.

Citation Download Citation

Qingsong Wang, Jun Chen, Jiabing Lv, Mingxiang Wang, Xue Li, and Hengjing Tang "Optimization and analysis of near-infrared InGaAs detectors", Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94491Q (19 February 2015); https://doi.org/10.1117/12.2083191

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