The Recombination Mechanism Of Excited-State Acceptor-Acceptor Pairs In GaAs

Nobukazu Ohnishi; Yunosuke Makita; Masahiko Mori; Paul Phelan; Katsuhiro Irie

doi:10.1117/12.947429

9 August 1988 The Recombination Mechanism Of Excited-State Acceptor-Acceptor Pairs In GaAs

Nobukazu Ohnishi, Yunosuke Makita, Masahiko Mori, Paul Phelan, Katsuhiro Irie

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947429
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Recently we found two new emissions denoted by 'g' and [g-g] in the low temperature photoluminescence (PL) spectra of acceptor-impurity incorporated GaAs. 'g is situated at an energy slightly below that of the bound exciton emissions. [g-g] is situated just below 'g' and shows a significant energy-shift towards the lower energy side with increasing acceptor concentration,[A]. Previously we proposed a model in which [g-g] was ascribed to the acceptor-acceptor pair formed by the overlapping of wave functions of the 2p state of the isolated acceptors. Although the calculated energy as a function of [A] showed qualitative agreement with the experimental results, it was always larger than the observed binding energy of [g-g]. In this paper it is indicated that the red shift of [g-g] with increasing [A], and its energy locking at a critical [A], can be well explained by phenomenologically taking into account the screening effect of the hole which is in the ground state. It was explicitly demonstrated that [g-g] is a very useful optical tool for the estimation of [A].

Citation Download Citation

Nobukazu Ohnishi, Yunosuke Makita, Masahiko Mori, Paul Phelan, and Katsuhiro Irie "The Recombination Mechanism Of Excited-State Acceptor-Acceptor Pairs In GaAs", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947429

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