Defect characterization of Cd0.9Zn0.1Te crystals using electron beam induced current (EBIC) imaging and thermally stimulated current (TSC) measurements

Rahmi O. Pak; Khai V. Nguyen; Cihan Oner; Mohammad A. Mannan; Krishna C. Mandal

doi:10.1117/12.2196590

4 September 2015 Defect characterization of Cd_0.9Zn_0.1Te crystals using electron beam induced current (EBIC) imaging and thermally stimulated current (TSC) measurements

Rahmi O. Pak, Khai V. Nguyen, Cihan Oner, Mohammad A. Mannan, Krishna C. Mandal

Author Affiliations +

Proceedings Volume 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII; 95931J (2015) https://doi.org/10.1117/12.2196590
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

Semi-insulating Cd_0.9Zn_0.1Te nuclear detector grade crystals were grown by a low temperature solution method from in-house zone refined (~7N) precursor materials. The processed crystals from the grown ingot were thoroughly characterized by using a non-destructive electron beam induced current (EBIC) contrast imaging method. The EBIC results were correlated with the infrared (IR) transmittance mapping, which confirms the variation of contrasts in EBIC is due to non-uniform distribution of tellurium inclusions in the grown CZT crystal. Electrical characteristics of defect regions in the fabricated detectors were further investigated by I-V measurements, and thermally stimulated current (TSC) measurements. Finally, to demonstrate the high quality of the grown CZT crystals, pulse height spectra (PHS) measurements were carried out using gamma radiation sources of ²⁴¹Am (59.6 keV) and ¹³⁷Cs (662 keV).

Citation Download Citation

Rahmi O. Pak, Khai V. Nguyen, Cihan Oner, Mohammad A. Mannan, and Krishna C. Mandal "Defect characterization of Cd_0.9Zn_0.1Te crystals using electron beam induced current (EBIC) imaging and thermally stimulated current (TSC) measurements", Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95931J (4 September 2015); https://doi.org/10.1117/12.2196590

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