Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics

A. C. Scofield; A. I. Hudson; B. L. Liang; N. P. Wells; D. L. Huffaker; W. T. Lotshaw

doi:10.1117/12.2224308

13 May 2016 Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics

A. C. Scofield, A. I. Hudson, B. L. Liang, N. P. Wells, D. L. Huffaker, W. T. Lotshaw

Author Affiliations +

Proceedings Volume 9835, Ultrafast Bandgap Photonics; 98350F (2016) https://doi.org/10.1117/12.2224308
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

We use steady-state and time-resolved spectroscopy to evaluate optoelectronic material quality and obtain detailed information about carrier generation, transport, and relaxation in semiconductor devices and test structures. This report focuses on time-resolved and steady-state photoluminescence of III-V reference heterostructures at temperatures between 4K and 300K in order to investigate the mechanisms limiting carrier lifetime and to develop the capability to provide actionable feedback to research-and-development efforts for improvement and optimization of material properties and/or device performance. We combine the results of photoluminescence experiments with model-based analyses and simulations of carrier relaxation to assess the impacts of defects and interface quality on the relaxation dynamics of photo-generated carriers in double heterostructure test vehicles grown by MOCVD and MBE.

Citation Download Citation

A. C. Scofield, A. I. Hudson, B. L. Liang, N. P. Wells, D. L. Huffaker, and W. T. Lotshaw "Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics", Proc. SPIE 9835, Ultrafast Bandgap Photonics, 98350F (13 May 2016); https://doi.org/10.1117/12.2224308

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