Fabrication And Performance Of KTP Optoelectronic Modulators

D. B. Laubacher; V. Guerra; M. P. Chouinard; J. Y. Liou; P. H. Wyant

doi:10.1117/12.960074

6 December 1988 Fabrication And Performance Of KTP Optoelectronic Modulators

D. B. Laubacher, V. Guerra, M. P. Chouinard, J. Y. Liou, P. H. Wyant

Proceedings Volume 0993, Integrated Optical Circuit Engineering VI; (1988) https://doi.org/10.1117/12.960074
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

We have fabricated ion-exchanged potassium titanyl phosphate (KTP) Mach Zehnder and phase modulators operating at X = 1.3um and 0.633um. These devices were designed for very high frequency operation with a 3-db modulation bandwidth of greater than 12GHz. Device insertion losses were between 1.5db and 5db with switching voltages (D.C. ) of 10V. Thick (- 3μm) electroplated gold was used to produce low-loss 50Q impedance coplanar strip electrodes. High optical power operation at 0.633um ( -100μW) produced no optical damage effects. Further results such as device stability will be presented at the conference.

Citation Download Citation

D. B. Laubacher, V. Guerra, M. P. Chouinard, J. Y. Liou, and P. H. Wyant "Fabrication And Performance Of KTP Optoelectronic Modulators", Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); https://doi.org/10.1117/12.960074

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