Physical mechanisms of surface terahertz emission from semiconductors

A. Krotkus; A. Arlauskas; R. Adomavičius; I. Nevinskas; V. L. Malevich

doi:10.1117/12.2242113

26 September 2016 Physical mechanisms of surface terahertz emission from semiconductors

A. Krotkus, A. Arlauskas, R. Adomavičius, I. Nevinskas, V. L. Malevich

Proceedings Volume 9934, Terahertz Emitters, Receivers, and Applications VII; 993405 (2016) https://doi.org/10.1117/12.2242113
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

Microscopic origin of THz emission from femtosecond laser excited narrow gap semiconductor surfaces is explained in terms of the photoelectron ballistic movement in non-parabolic and anisotropic conduction band. It has been shown that the azimuthal angle dependences of this emission are caused by the lateral photocurrent component resulting from that anisotropy. A strong THz radiation was observed from the lower symmetry crystal planes illuminated along their surface normal, which has allowed to demonstrate experimentally user-friendly line-of-sight THz emitters made from the bulk InAs and InSb, InAs pn diodes and p-i-n structures with GaInAs active layers.

Citation Download Citation

A. Krotkus, A. Arlauskas, R. Adomavičius, I. Nevinskas, and V. L. Malevich "Physical mechanisms of surface terahertz emission from semiconductors", Proc. SPIE 9934, Terahertz Emitters, Receivers, and Applications VII, 993405 (26 September 2016); https://doi.org/10.1117/12.2242113

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