Picosecond Pulsing And Sampling By GaAs Photodetectors Fabricated On Silicon Substrates

J. D. Morse; M. D. Pocha; R. W. Dutton; G. D. Anderson; J. W. Adkisson

doi:10.1117/12.960118

9 February 1989 Picosecond Pulsing And Sampling By GaAs Photodetectors Fabricated On Silicon Substrates

J. D. Morse, M. D. Pocha, R. W. Dutton, G. D. Anderson, J. W. Adkisson

Proceedings Volume 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II; (1989) https://doi.org/10.1117/12.960118
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

Picosecond photoconductivity by Gallium Arsenide grown directly on silicon and silicon dioxide by Molecular Beam Epitaxy (MBE) has been investigated. Initial results from high speed measurements have demonstrated the potential of this material to achieve sub-10 picosecond recombination lifetimes for photogenerated carriers, while retaining reasonable effective drift mobilities. Thus, photodetectors fabricated from this material can be applied as picosecond pulsing and sampling circuit elements for both silicon and GaAs integrated circuit technologies.

Citation Download Citation

J. D. Morse, M. D. Pocha, R. W. Dutton, G. D. Anderson, and J. W. Adkisson "Picosecond Pulsing And Sampling By GaAs Photodetectors Fabricated On Silicon Substrates", Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); https://doi.org/10.1117/12.960118

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