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2 November 2016 Identification of dopant-induced point defects and their effect on the performance of CZT detectors (Conference Presentation)
Rubi Gul, Aleksey E. Bolotnikov, Giuseppe S. Camarda, Yonggang Cui, Václav Didic, Stephen U. Egarievwe, Anwar Hossain, Utpal N. Roy, Ge Yang, Ralph B. James
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Proceedings Volume 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII; 996818 (2016) https://doi.org/10.1117/12.2240331
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States
Abstract
In our prior research we investigated room-temperature radiation detectors (CZT, CMT, CdMgTe, CTS, among other compound semiconductors) for point defects related to different dopants and impurities. In this talk we will report on our most recent research on newly grown CZT crystals doped with In, In+Al, In+Ni, and In+Sn. The main focus will be on the study of dopant-induced point defects using deep-level current transient spectroscopy (i-DLTS). In addition the performance,  product, gamma-ray spectral response and internal electric field of the detectors were measured and correlated with the dopant-induced point defects and their concentrations. Characterization of the detectors was carried out using i-DLTS for the point defects, Pockels effect for the internal electric-field distribution, and -ray spectroscopy for the spectral properties.
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Rubi Gul, Aleksey E. Bolotnikov, Giuseppe S. Camarda, Yonggang Cui, Václav Didic, Stephen U. Egarievwe, Anwar Hossain, Utpal N. Roy, Ge Yang, and Ralph B. James "Identification of dopant-induced point defects and their effect on the performance of CZT detectors (Conference Presentation)", Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 996818 (2 November 2016); https://doi.org/10.1117/12.2240331
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KEYWORDS
Sensors
Sensor performance
Spectroscopy
Gamma radiation
Compound semiconductors
Crystals
Electric field sensors
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