Analyzing EUV mask costs

Michael Lercel; Bryan Kasprowicz

doi:10.1117/12.2246796

25 October 2016 Analyzing EUV mask costs

Michael Lercel, Bryan Kasprowicz

Proceedings Volume 9985, Photomask Technology 2016; 99850T (2016) https://doi.org/10.1117/12.2246796
Event: SPIE Photomask Technology, 2016, San Jose, California, United States

Abstract

The introduction of Extreme Ultraviolet Lithography (EUV) as a replacement for multiple patterning is based on improvements of cycle time, yield, and cost. Earlier cost studies have assumed a simple assumption that EUV masks (being more complex with the multilayer coated blank) are not more than three times as expensive as advanced ArFi (ArF immersion) masks. EUV masks are expected to be more expensive during the ramp of the technology because of the added cost of the complex mask blank, the use of EUV specific mask tools, and a ramp of yield learning relative to the more mature technologies. This study concludes that, within a range of scenarios, the hypothesis that EUV mask costs are not more than three times that of advanced ArFi masks is valid and conservative.

Citation Download Citation

Michael Lercel and Bryan Kasprowicz "Analyzing EUV mask costs", Proc. SPIE 9985, Photomask Technology 2016, 99850T (25 October 2016); https://doi.org/10.1117/12.2246796

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