Presentation
1 April 2022 Recent advances of InGaSb SESAMs in the 2 to 2.4-µm wavelength regime
Jonas Heidrich, Marco Gaulke, B. Ozgur Alaydin, Matthias Golling, Ajanta Barh, Ursula Keller
Author Affiliations +
Abstract
We present the characterization under intracavity conditions of semiconductor saturable absorber mirrors (SESAMs) operating from 2 – 2.4 µm. The precise nonlinear reflectivity and recovery time measurement setups reveal excellent parameters of our in-house grown 2.05 and 2.4 µm SESAMs. Low saturation fluences around 4 µJ/cm2, percent range modulation depth, extremely low non-saturable losses and fast recovery within a few tens of picoseconds have been measured for all SESAMs. Using these SESAMs output power records in modelocking of vertical external-cavity surface-emitting lasers (VECSELs), thin-disk Ho:YAG lasers at 2 µm wavelength and Cr:ZnS lasers at 2.4 µm are achieved.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonas Heidrich, Marco Gaulke, B. Ozgur Alaydin, Matthias Golling, Ajanta Barh, and Ursula Keller "Recent advances of InGaSb SESAMs in the 2 to 2.4-µm wavelength regime", Proc. SPIE PC11984, Vertical External Cavity Surface Emitting Lasers (VECSELs) XI, PC1198407 (1 April 2022); https://doi.org/10.1117/12.2609693
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KEYWORDS
Quantum wells

Fiber lasers

Mode locking

Solid state lasers

Ultrafast phenomena

Semiconductor lasers

Semiconductors

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