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We report record performance and full gain characterization of an optically pumped continuous wave InGaSb VECSEL operating around 2 µm. Our flip-chip processed and backside-cooled VECSEL performs similar to intracavity heatspreader cooling and obtained even similar thermal resistance of only 3.45 KW-1 and an average output power of >800 mW. Our gain characterization setups can cover a wavelength range from 1.9 µm to 3 µm. Linear and nonlinear gain characteristics are measured as a function of wavelength, fluence, pump power and heatsink temperature. 2-µm VECSEL chips with different strategies in heat management are compared and theoretical predictions are in good agreement.
Marco Gaulke,Jonas Heidrich,B. Özgür Alaydin,Matthias Golling,Ajanta Barh, andUrsula Keller
"High average output power from a backside-cooled 2-μm InGaSb VECSEL with full gain characterization", Proc. SPIE PC11984, Vertical External Cavity Surface Emitting Lasers (VECSELs) XI, PC1198409 (1 April 2022); https://doi.org/10.1117/12.2609591
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Marco Gaulke, Jonas Heidrich, B. Özgür Alaydin, Matthias Golling, Ajanta Barh, Ursula Keller, "High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization," Proc. SPIE PC11984, Vertical External Cavity Surface Emitting Lasers (VECSELs) XI, PC1198409 (1 April 2022); https://doi.org/10.1117/12.2609591