Presentation
1 April 2022 High average output power from a backside-cooled 2-μm InGaSb VECSEL with full gain characterization
Marco Gaulke, Jonas Heidrich, B. Özgür Alaydin, Matthias Golling, Ajanta Barh, Ursula Keller
Author Affiliations +
Abstract
We report record performance and full gain characterization of an optically pumped continuous wave InGaSb VECSEL operating around 2 µm. Our flip-chip processed and backside-cooled VECSEL performs similar to intracavity heatspreader cooling and obtained even similar thermal resistance of only 3.45 KW-1 and an average output power of >800 mW. Our gain characterization setups can cover a wavelength range from 1.9 µm to 3 µm. Linear and nonlinear gain characteristics are measured as a function of wavelength, fluence, pump power and heatsink temperature. 2-µm VECSEL chips with different strategies in heat management are compared and theoretical predictions are in good agreement.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marco Gaulke, Jonas Heidrich, B. Özgür Alaydin, Matthias Golling, Ajanta Barh, and Ursula Keller "High average output power from a backside-cooled 2-μm InGaSb VECSEL with full gain characterization", Proc. SPIE PC11984, Vertical External Cavity Surface Emitting Lasers (VECSELs) XI, PC1198409 (1 April 2022); https://doi.org/10.1117/12.2609591
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KEYWORDS
Optical pumping

Heatsinks

Mode locking

Resistance

Structural design

Temperature metrology

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