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The key limiting factor for output power scaling of VECSELs is the thermal resistance of the structure owing to the DBR thickness and the heat conductivity of the semiconductor materials. We have successfully fabricated a flip-chip processed GaSb/AlAs0.08Sb0.92 hybrid DBR for 2 µm with only 7.5 mirror pairs and a 100-nm gold layer. The hybrid DBR reaches a high reflectivity >99.5% with a reduced total thickness of 2.3 µm. The measured spectral reflectivity of the hybrid DBR reveals a clear gold layer and matches theoretical simulations. High power 2-µm VECSEL development with the presented hybrid-mirror structure is under way.
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