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5 March 2022 Optimization of tunnel junction growth on m-plane GaN substrate for multi-quantum shell-based devices
Shiori Yamamura, Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC1200109 (2022) https://doi.org/10.1117/12.2608402
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Current injection through tunnel junctions (TJs) can enhance the external quantum efficiency of nanowire (NW) and multi-quantum-shell-based optical devices, compared. However, control of the impurity concentration profile is difficult in such tiny structure. In this study, we show a simple evaluation method of impurities in TJs growing flatly on m-plane GaN substrates, which have the same crystalline orientation as the luminescent surface of MQS/NWs. It was found to decrease the differential resistance by increase the concentration of Mg in p^(++)-GaN in the TJ.
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Shiori Yamamura, Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, and Motoaki Iwaya "Optimization of tunnel junction growth on m-plane GaN substrate for multi-quantum shell-based devices", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200109 (5 March 2022); https://doi.org/10.1117/12.2608402
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KEYWORDS
Gallium nitride
Magnesium
Doping
Ions
Mass spectrometry
Nanowires
Oxides
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