Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double-side step n-AlGaN inserted layer

Yue Sun; Huabin Yu; Haochen Zhang; Muhammad Hunain Memon; Danhao Wang; Haiding Sun

doi:10.1117/12.2609822

5 March 2022 Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double-side step n-AlGaN inserted layer

Yue Sun, Huabin Yu, Haochen Zhang, Muhammad Hunain Memon, Danhao Wang, Haiding Sun

Author Affiliations +

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010W (2022) https://doi.org/10.1117/12.2609822
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

A deep ultraviolet LED structure with a double-side step n-AlGaN inserted layer was constructed to alleviate the electron leakage and improve confinement capability of holes, thus enhancing the optical power and the internal quantum efficiency.

Conference Presentation

Citation Download Citation

Yue Sun, Huabin Yu, Haochen Zhang, Muhammad Hunain Memon, Danhao Wang, and Haiding Sun "Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double-side step n-AlGaN inserted layer", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010W (5 March 2022); https://doi.org/10.1117/12.2609822

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available