High quality MBE-grown GaN p-n nanowires and their carrier transport control for photoelectrochemical ultraviolet photodetection

Shi Fang; Danhao Wang; Haiding Sun

doi:10.1117/12.2605967

5 March 2022 High quality MBE-grown GaN p-n nanowires and their carrier transport control for photoelectrochemical ultraviolet photodetection

Shi Fang, Danhao Wang, Haiding Sun

Author Affiliations +

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC1200117 (2022) https://doi.org/10.1117/12.2605967
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

The single-crystalline GaN nanowires play crucial roles in the pursuit of modern nanophotonic and nanoelectronic devices. Here, a photoelectrochemical-type ultraviolet photodetector consisting of GaN p-n junction nanowires as photoelectrodes is constructed. It is found that two competing charge transport processes co-determine the photoresponsive behavior of the device. Furthermore, the surface platinum (Pt) decoration has successfully tuned the charge transfer dynamics by enhancing the charge transport efficiency of the one process at the surface, resulting in a twenty-fold increase of the photocurrent. Theoretical calculations reveal that the high photoresponse benefits from the newly formed electronic states at the Pt/GaN interface and the optimized hydrogen adsorption energy.

Citation Download Citation

Shi Fang, Danhao Wang, and Haiding Sun "High quality MBE-grown GaN p-n nanowires and their carrier transport control for photoelectrochemical ultraviolet photodetection", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200117 (5 March 2022); https://doi.org/10.1117/12.2605967

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